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Extra resources for Advanced Transmission Electron Microscopy: Applications to Nanomaterials
17 shows that diffraction patterns containing a large number of spots are obtained. If the initial pattern appears stable in subsequent frames (a few of them), we can then be sure that this corresponds to the original structure and it is not modified by the radiation damage. Then using the diffraction results combined with the data from HAADF-STEM images, we have matched the image, the FFT, the mass spectrometry, and the diffraction pattern with models obtained by DFT calculations. This iteration process is a continuous trial and error until the model can explain all the experimental data.
For the actual calculation of the convergence angle from the electron diffraction patterns acquired in the different experiments, the software Gatan DigitalMicrograph (DM) was used in order to perform the different measurements required. The diffraction patterns acquired corresponded to the  zone axis of the Si monocrystalline sample used as reference in this study. 1 Camera Length Variations The following diffraction patterns shown in Fig. 2 were acquired in TEM mode and correspond to the modification of the camera length of the microscope.
Bals, S. Van Aert, J. Verbeeck, D. van Dyck, Advanced electron microscopy for advanced materials. Adv. Mater. ), Scanning Transmission Electron Microscopy: Imaging and Analysis (Springer, New York, 2011), p. 762 41. A. De Backer, G. Martinez, A. Rosenauer, S. Van Aert, Atom counting in HAADF STEM using a statistical model-based approach: methodology, possibilities, and inherent limitations. Ultramicroscopy 134, 23–33 (2013) 42. M. D. J. Allen, S. Stemmer, Standardless atom counting in scanning transmission electron microscopy.