By Jawar Singh
This ebook offers a advisor to Static Random entry reminiscence (SRAM) bitcell layout and research to fulfill the nano-regime demanding situations for CMOS units and rising units, corresponding to Tunnel FETs. seeing that technique variability is an ongoing problem in huge reminiscence arrays, this e-book highlights the most well-liked SRAM bitcell topologies (benchmark circuits) that mitigate variability, in addition to exhaustive research. Experimental simulation setups also are incorporated, which hide nano-regime demanding situations reminiscent of strategy edition, leakage and NBTI for SRAM layout and research. Emphasis is positioned in the course of the e-book at the numerous trade-offs for reaching a top SRAM bitcell design.
- Provides an entire and concise creation to SRAM bitcell layout and research;
- Offers options to stand nano-regime demanding situations corresponding to strategy version, leakage and NBTI for SRAM layout and analysis;
- Includes simulation set-ups for extracting diverse layout metrics for CMOS expertise and rising devices;
- Emphasizes assorted trade-offs for reaching the absolute best SRAM bitcell design.
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Extra resources for Robust SRAM Designs and Analysis
11 shows static voltage noise margin (SV NM), static current noise margin (SINM), write trip voltage (W TV ), and write trip current (W T I). The SV NM is defined as a maximum tolerable DC noise voltage at internal nodes of the bitcell before its content flips and it is measured as a voltage difference between point B and A. Similarly, SINM can be defined as a maximum tolerable DC noise current injected at internal nodes of the bitcell before its content changes and it is measured as a peak current located between point A and B.
Precharge the bitlines (BL and BLB) to the supply voltage (VDD ). • After prechrage, both the bitlines (BL and BLB) are disconnected from the supply voltage (VDD ). • Wordline (WL) is activated to high (data enters the bitcell during this step). • Place the data value on the BL and the complementary data value on BLB. • The bitline BLB connected to the data storage node QB via M2 , is driven to the ground potential by a write driver through the M2 pass-gate transistor, while the BL is remained held at VDD to pull node Q to high via M1 pass-gate transistor.
The output of the sense amplifier (Data) resolves to the correct value TB is shown in Fig. 24c. The bitcell stress applied with different wordline pulse widths have significant role in determining the dynamic read stability. Therefore, there should be a critical pulse width Tread (TA < Tread < TB ), for which the bitcell is on threshold of destructive read operation or read upset. 54 2 Design Metrics of SRAM Bitcell Fig. 24 SRAM bitcell under read access for different wordline pulse widths. e. both bitlines are precharged to VDD and wordline is active with different pulse widths).